26 October 1983 CW CO2 Laser Annealing
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Proceedings Volume 0398, Industrial Applications of Laser Technology; (1983) https://doi.org/10.1117/12.935408
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
The paper reports on a numerical analysis of the thermal phenomena during cw CO2 laser annealing of implanted silicon. At the surface of the sample the nonlinear heat equation was solved together with diffusion equation for free-carriers density. The results are in a quite good agreement with the reported experimental results.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Nanu, L. Nanu, E. Cojocaru, E. Cojocaru, I. N. Mihailescu, I. N. Mihailescu, L. C. Nistor, L. C. Nistor, V. Teodorescu, V. Teodorescu, } "CW CO2 Laser Annealing", Proc. SPIE 0398, Industrial Applications of Laser Technology, (26 October 1983); doi: 10.1117/12.935408; https://doi.org/10.1117/12.935408
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