26 October 1983 Fabrication High Resolution Metrology Target By Step And Repeat Method
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Proceedings Volume 0398, Industrial Applications of Laser Technology; (1983) https://doi.org/10.1117/12.935402
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
Based on the photolithography process generally used to generate high resolution masks for semiconductor I.C.S, we found a very useful industrial application of laser technology.First, we have generated high resolution metrology targets which are used in industrial measurement laser interferometers as difra.ction gratings. Secondi we have generated these targets using step and repeat machine, with He-Ne laser interferometer controlled state, as a pattern generator, due to suitable computer programming.Actually, high resolution metrology target, means two chromium plates, one of which is called the" rule" the other one the "vernier". In Fig.1 we have the configuration of the rule and the vernier. The rule has a succesion of 3 μM lines generated as a difraction grating on a 4 x 4 inch chromium blank. The vernier has several exposed fields( areas) having 3 - 15 μm lines, fields placed on very precise position on the chromium blank surface. High degree of uniformity, tight CD tolerances, low defect density required by the targets, creates specialised problems during processing. Details of the processing, together with experimental results will be presented. Before we start to enter into process details, we have to point out that the dimensional requirements of the reticle target, are quite similar or perhaps more strict than LSI master casks. These requirements presented in Fig.2.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea Dusa, Mircea Dusa, } "Fabrication High Resolution Metrology Target By Step And Repeat Method", Proc. SPIE 0398, Industrial Applications of Laser Technology, (26 October 1983); doi: 10.1117/12.935402; https://doi.org/10.1117/12.935402
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