8 September 1983 Properties Of Hydrogenated Amorphous Silicon Prepared By Chemical Vapor Deposition From Higher Silanes
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Proceedings Volume 0407, Photovoltaics for Solar Energy Applications II; (1983); doi: 10.1117/12.935687
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
A review is given of the optical, electronic and device properties of hydrogenated amorphous silicon (a-Si:H) prepared by chemical vapor deposition (CVD) from higher order silanes. Prepared in this way, a-Si:H possesses a smaller energy gap than its counterpart prepared by glow discharge (GD) techniques, and thus is a potentially interesting material for photovoltaic solar energy conversion. Topics discussed are the deposition mechanism, hydrogen concentration and bonding, the optical energy gap, dark conductivity and photo-conductivity, sub-bandgap absorption, the effect of hydrogen plasma treatment, doping properties, gap states, and photovoltaic devices.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Delahoy, "Properties Of Hydrogenated Amorphous Silicon Prepared By Chemical Vapor Deposition From Higher Silanes", Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); doi: 10.1117/12.935687; https://doi.org/10.1117/12.935687
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KEYWORDS
Chemical vapor deposition

Hydrogen

Silicon

Absorption

Temperature metrology

Photovoltaics

Amorphous silicon

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