30 November 1983 Fabrication Of Graded Index SiO2 Planar Optical Waveguides On Silicon Exhibiting Low Scattering
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Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935703
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
Planar graded index Si02 optical waveguides characterized by very low scattering have been fabricated on silicon substrates. The waveguides were thermally grown on silicon in two different ways. In one case, a Si02 thickness of 15 microns resulted in waveguiding with a total waveguide attenuation of 0.6 dB/cm. In another case, intentional doping of the Si02 layer allowed waveguiding to take place at a thickness of 6.6 microns with a total waveguide attenuation of 2.3 dB/cm. In each case, the relatively small magnitude of the refractive index change suggests that coupling to the silicon substrate is an important loss mechanism. Measurements imply that scattering loss from the waveguide itself is exceedingly low, and that continuing efforts to increase the field confinement may result in waveguides characterized by a substantially smaller value for the total waveguide attenuation.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard E. Jackson, Howard E. Jackson, David E. Zelmon, David E. Zelmon, J. T. Boyd, J. T. Boyd, P. B. Kosel, P. B. Kosel, } "Fabrication Of Graded Index SiO2 Planar Optical Waveguides On Silicon Exhibiting Low Scattering", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935703; https://doi.org/10.1117/12.935703
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