Paper
30 November 1983 GaAlAs p-i-n Junction Waveguide Modulators.
Gabriel Lengyel
Author Affiliations +
Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935717
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
The electro-optical effect (Pockels Effect) induced in zincblende structures can be utilized to modify the phase and polarization characteristics of the transmitted light. The III-V group of semiconductors and their ternary and quaternary mixtures represent a particularly important group of zincblende structures because these also provide the most important semiconductor laser materials. The characteristics of different crystal orientations and their possible uses in optical communication systems are reviewed. Polarization modulators are practically interesting devices which can be fabricated from these materials in waveguide form. Possible applications for these - in addition to polarization control - are intensity modulation and optical isolation. Polarization characteristics are analyzed with the help of Jones matrices. An example of a simple polarization modulator is presented and experimental results discussed. A good agreement with theoretical predictions was attained.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gabriel Lengyel "GaAlAs p-i-n Junction Waveguide Modulators.", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); https://doi.org/10.1117/12.935717
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Modulators

Waveguides

Modulation

Polarization

Dielectric polarization

Semiconductor lasers

Crystals

Back to Top