30 November 1983 Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)
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Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935719
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
Optoelectronic integration of an InGaAsP/InP laser is discussed. Low threshold buried heterostructure lasers on semi-insulating InP substrate and junction FETs compatible with integration are developed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. Chen, P. C. Chen, H. D. Law, H. D. Law, E. Rezek, E. Rezek, C. H. Lee, C. H. Lee, A. Carpenter, A. Carpenter, } "Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935719; https://doi.org/10.1117/12.935719
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