30 November 1983 Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)
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Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935719
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Optoelectronic integration of an InGaAsP/InP laser is discussed. Low threshold buried heterostructure lasers on semi-insulating InP substrate and junction FETs compatible with integration are developed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. Chen, H. D. Law, E. Rezek, C. H. Lee, A. Carpenter, "Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935719; https://doi.org/10.1117/12.935719

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