Two-dimensional arrays of a novel infrared detector, the Charge Imaging Matrix, (CIM), based on HgCdTe charge transfer devices have been demonstrated on p-type HgCdTe of 0.13 eV and 0.25 eV bandgap at 78K. The purpose was to demonstrate a detector for scanned infrared focal plane applications. A principle feature of a CIM is that it can be operated at high readout rates with off-chip TDI (time-delay-integration) using silicon circuitry and thus avoiding the excessive well capacity requirements of CCDs at long wave-lengths. A CIM pixel has three principle elements: (1) a metal-insulator-semiconductor (MIS) detector with semitransparent metal gate for infrared detection separated from (2) a sense diode by (3) an opaque MIS transfer gate for charge transfer control. CIMs can be operated at high readout rates because their operation does not require charge injection as does CID operation. Instead, the charge is extracted from the sense diode during the preset operation allowing data rates to exceed one megahertz. Arrays with up to 9 x 8 pixels on 76.2 um centers were fabricated on material with hole concentrations of 1-5 x 1015 cm-3 at 78K using processes similar to those used to fabri-cate HgCdTe CCDs and CIDs . Diodes were formed by boron ion implantation. CIM devices with 4-5 pm and 9-10 pm cutoff wavelengths were tested at 78K for operability, spectral response, inter-pixel crosstalk, and detectivity. Their design, fabrication, and electro-optical tests will be discussed.