30 November 1983 Molecular Beam Epitaxial Growth And Characterization Of Hg1-xCdxTe
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Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935728
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
A molecular beam epitaxy (MBE) system designed for the growth of Hg l-xCdxTe alloys is described. The system is equipped with both binary (CdTe) and elemental Hg, Cd, and Te sources and has been used to grow epitaxial layers of CdTe and Hg 1-xCdxTe with x-value between 0.9 and 0.5 on (111) orientated CdTe substrates. The growth of CdTe on (100) orientated GaAs and 1nP substrates is also reported.
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C. J. Summers, C. J. Summers, E. L. Meeks, E. L. Meeks, N. W. Cox, N. W. Cox, } "Molecular Beam Epitaxial Growth And Characterization Of Hg1-xCdxTe", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935728; https://doi.org/10.1117/12.935728
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