30 November 1983 Monolithic Lead Salt-Silicon Focal Plane Development
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Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935740
Event: 1983 Technical Symposium East, 1983, Arlington, United States
This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Barrett, John R. Barrett, Murzban D. Jhabvala, Murzban D. Jhabvala, Francis S. Maldari, Francis S. Maldari, } "Monolithic Lead Salt-Silicon Focal Plane Development", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935740; https://doi.org/10.1117/12.935740


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