30 November 1983 The Anodic Oxide of Hg1-xCdxTe: THe Composition And Reaction With The Substrate
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Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935734
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
The chemistry of the anodic oxide of Hgl-xCdxTe is reviewed. The oxide is generally believed to contain little Hg and primarily consist of CdTeO3 with smaller amounts of HgTe03, CdTe205, HgTe205, or Te02. Consistent with the weakening Hg-Te bond strength for lower x value material, a severely defective interface between the oxide and the substrate is reported for Hg0.8Cd0.2Te, but not for Hg0.7Cd0.3Te. The detailed nature of these defects, however, remains open to debate. Models include a Hg-depleted layer in the semiconductor and an inhomogeneous oxide layer near the interface.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. D. Davis, G. D. Davis, S. P. Buchner, S. P. Buchner, J . S. Ahearn, J . S. Ahearn, N. E . Byer, N. E . Byer, } "The Anodic Oxide of Hg1-xCdxTe: THe Composition And Reaction With The Substrate", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935734; https://doi.org/10.1117/12.935734
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