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30 November 1983 The Refractive Index Of CdxHg1-xTe
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Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983)
Event: 1983 Technical Symposium East, 1983, Arlington, United States
The refractive index n of the ternary compound CdxHgl-xTe is calculated as a function of frequency and mole fraction x in terms of known experimental parameters. The theoretical result for n is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor, which has been successfully applied to a number of III V and II VI binary and ternary compounds for which experimental data are available. It is given in terms of basic material parameters only, with no adjustable constants. These material parameters consist of band gap energy, effective electron mass and effective heavy hole mass at the band edge, the spin-orbit splitting energy, the lattice constant and the carrier concentration for n-type or p-type materials. If these parameters are known as functions of mole fraction x, the refractive index is completely determined as a function of frequency below the fundamental absorption edge.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Jensen and A. Torabi "The Refractive Index Of CdxHg1-xTe", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983);


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