14 October 1983 Millimeter-Wave InP Gunn Devices
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Abstract
InP Gunn devices are playing an important role in the development of millimeter-wave components as active devices which perform well throughout the millimeter-wave range. Efficient CW oscillators have been developed covering the 35-140 GHz range. InP Gunn diodes are also being used extensively for low noise and medium power amplification. Amplifiers have been constructed for operation up to 95 GHz.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Crowley, J. D. Crowley, } "Millimeter-Wave InP Gunn Devices", Proc. SPIE 0423, Millimeter Wave Technology II, (14 October 1983); doi: 10.1117/12.936160; https://doi.org/10.1117/12.936160
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