14 October 1983 Noise Performance Of Millimeter-Wave Mixed Tunneling And Avalanche Transit-Time (MITATT) Oscillators
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Proceedings Volume 0423, Millimeter Wave Technology II; (1983); doi: 10.1117/12.936159
Event: 27th Annual Technical Symposium, 1983, San Diego, United States
Abstract
A 130 GHz GaAs Schottky-barrier diode oscillator operated in the MITATT mode is described. Preliminary results show that the noise performance of a MITATT source is indeed lower than that of an IMPATT source. With further improvement, MITATT diode oscil-lators can be useful for medium power, low noise applications above 100 GHz.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Yen, P. Basay, R. Anderson, "Noise Performance Of Millimeter-Wave Mixed Tunneling And Avalanche Transit-Time (MITATT) Oscillators", Proc. SPIE 0423, Millimeter Wave Technology II, (14 October 1983); doi: 10.1117/12.936159; https://doi.org/10.1117/12.936159
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KEYWORDS
Oscillators

Diodes

Fermium

Frequency modulation

Gallium arsenide

Amplifiers

Receivers

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