1 December 1983 Deposition Of Transparent Conducting Indium - Tin Oxide Films By Dc Sputtering
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Abstract
Unique d.c. reactive sputtering process using a very thin layer of In/Sn alloy(10 wt% Sn) target, at high power levels hasAbeen used to prepare transparent conducting films of ITO with low resistivity (1.17 x 10 ' ohm.m), high optical transmission ("› 95%) and of high infra-red reflectivity (e,J90%) for applications as transparent windows in electro-optical devices and solar energy systems. No post-deposition annealing is required. Substrate heating is accomplished entirely by the ion-bombardment intrinsic to DC sputtering, rather than by using an auxilliary resistance heater. Optical, electrical and structural proper-ties of the films have been studied. The characteristic features of the ITO films are very low resistivity, high carrier density, high mobility, low temperature coefficient of resistivity and smaller grain size in comparison with pure indium oxide films. It was concluded from the thermal stability test that the contribution to the carrier density by tin is only a few percent to that created by oxygen.
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S. S. Bawa, S. S. Sharma, S. A. Agnihotry, A. M. Biradar, Subhas Chandra, "Deposition Of Transparent Conducting Indium - Tin Oxide Films By Dc Sputtering", Proc. SPIE 0428, Optical Materials and Process Technology for Energy Efficiency and Solar Applications, (1 December 1983); doi: 10.1117/12.936295; https://doi.org/10.1117/12.936295
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