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19 January 1984 High Speed Infrared Charge Injecton Device : Design Considerations
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Abstract
This paper describes the results of calculation to develop high speed infrared charge injection devices (IRCIDs). The charge injection time dominates the readout frequency of IRCIDs operated by a sequential injection scheme. The behavior of the injected minority carriers are simulated by solving the diffusion equation. The simulation reveals that the high speed device needs a special structure to eliminate the injected charge. Two devices are proposed. One structure is made on thin n-type layer formed by Hg diffusion to a p-type substrate. The p-n junction underlies the charge storage cell and removes the injected charge. The other structure uses an epitaxially grown substrate and utilizes the HgCdTeCdTe interface as recombination layer of the injected charge.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Maekawa, Y. Miyamoto, K. Tanikawa, and H. Takigawa "High Speed Infrared Charge Injecton Device : Design Considerations", Proc. SPIE 0430, Infrared Technology IX, (19 January 1984); https://doi.org/10.1117/12.936380
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