26 November 1983 Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes
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Abstract
Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.
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Clifton G. Fonstad, Clifton G. Fonstad, Austin Harton, Austin Harton, Yong-Ning Jiang, Yong-Ning Jiang, Howard Appelman, Howard Appelman, } "Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); doi: 10.1117/12.937424; https://doi.org/10.1117/12.937424
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