Tunable Diode Lasers For 3-30 Âµm Infrared Operation

Kurt J. Linden

doi:10.1117/12.937419

26 November 1983 Tunable Diode Lasers For 3-30 µm Infrared Operation

Kurt J. Linden

Proceedings Volume 0438, Tunable Diode Laser Development and Spectroscopy Applications; (1983) https://doi.org/10.1117/12.937419
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

This paper presents recent results obtained from tunable diode lasers fabricated from the Pb-salt materials Pb1-x Sn x Se, PbS1-xSex and Pb1x Cd x S. Four general areas are discussed: (1) Reliability improvement and statistical reliability data, (2) Performance improvements in stripe-geometry lasers, (3) Laser performance at wavelengths beyond 25 μm and (4) Laser performance at wavelengths below 4 μm. Improved processing techniques introduced several years ago have resulted in diode lasers with greatly improved shelf-storage stability values. A periodic re-test schedule involving hundreds of lasers has provided stability data which indicate retest survival rates of over 95% for lasers up to 5 years old. Criteria for retest survival and detailed results are presented. Performance improvements in stripe-geometry lasers of Pbi_xSnxSe and PbS1-xSex 4 cm -1 have resulted in lasers with single mode current-tuning ranges in excess of and maximum CW operating temperatures in excess of 100K. While significant improvements in single mode tuning range have been achieved, the ultimate limitations on tuning range are a natural consequence of the relatively narrow spectral gain curve of semiconductor lasers which cause the laser emission in a given mode to jump to another mode which is closer to the center of the gain curve as the device is current (or temperature) tuned. Along with improved single mode tunability devices with threshold current density values as low as 50 amp/cm2 have been obtained. Long wavelength (25-30 μm) lasers have been fabricated from Ploi_xSnxSe with single-mode output powers in excess of 200 μW. During the past year, under a NASA Goddard Space Flight Center-funded program, a reproducible process of obtaining 28 μm lasers has been achieved. Performance characteristics of these lasers are presented. Lasers emitting in the 2.8-4.3 pμm region have, in the past, been difficult to manufacture. Recent developments have increased the yields and performance of these lasers.

Citation Download Citation

Kurt J. Linden "Tunable Diode Lasers For 3-30 µm Infrared Operation", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937419

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