28 November 1983 A novel GaInAs/GaAs Heterostructure Interdigital Photodetector (HIP) Using Lattice Mismatched Epitaxial Layers
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Abstract
Planar high-speed interdigital photoconductive detectors have been fabricated on MOCVD-grown GaInAs/GaAs heterostructures. The small intentional lattice mismatch at the GaInAs/GaAs interface allows a controlled surface recombination velocity which decreases the effective lifetime of minority carriers without significant active layer mobility degradation. The InGaAs detectors have the following characteristics: bandgap of ~ 1.25 eV; rise times of < 25 psec; fall times ~ 50-100 psec; FWHM < 45 psec; high speed responsivity ~0.3 A/W; 2-300 nA leakage current at 5-10 V operating voltages and flat analog response to ~ 15 GHz.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. N. Maracas, G. N. Maracas, D. Moore, D. Moore, J. K. Kim, J. K. Kim, R. S. Sillmon, R. S. Sillmon, S. M. Bedair, S. M. Bedair, J. R. Hauser, J. R. Hauser, T. Carruthers, T. Carruthers, L. Figueroa, L. Figueroa, "A novel GaInAs/GaAs Heterostructure Interdigital Photodetector (HIP) Using Lattice Mismatched Epitaxial Layers", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966098; https://doi.org/10.1117/12.966098
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