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28 November 1983 Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP
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Abstract
Time-resolved measurements of the decay of photoexcited carriers in InGaAsP revea1 the presence of Auger recombination at carrier concentrations near and above 3x1018 cm-3. Our results suggest that while Auger recombination does contribute to the temperature dependence of the InGaAsP-1.3μm laser, it may not alone fully account for poorer room temperature dependence of InGaAsP-InP compared to GaAs-GaA1As lasers.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Heritage, B. Sermage, and O. E. Martinez "Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966066
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