Picosecond Electronic Relaxations In Amorphous Semiconductors

Jan Tauc

doi:10.1117/12.966065

28 November 1983 Picosecond Electronic Relaxations In Amorphous Semiconductors

Jan Tauc

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966065
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As₂S_3-xSe_x glasses.

Citation Download Citation

Jan Tauc "Picosecond Electronic Relaxations In Amorphous Semiconductors", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966065

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