28 November 1983 Picosecond Electronic Relaxations In Amorphous Semiconductors
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Abstract
Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.
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Jan Tauc, Jan Tauc, } "Picosecond Electronic Relaxations In Amorphous Semiconductors", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966065; https://doi.org/10.1117/12.966065
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