28 November 1983 Picosecond Photoconductive Switching In Semiconducting And Insulating Natural Diamond
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Proceedings Volume 0439, Picosecond Optoelectronics; (1983); doi: 10.1117/12.966080
Event: 27th Annual Technical Symposium, 1983, San Diego, United States
We have used 20 psec, 1.06 and 0.35 μm pulses to time resolve the photoconductive response of semiconducting and insulating natural diamonds, respectively. Pairs of diamonds were mounted in tandem in a biased coaxial transmission line and the time response of each was obtained by using a sample and gate technique that yields the cross-correlation of the induced photocurrents. Typical response times of 100-500 psec were determined for the semiconducting diamonds at room temperature; these times are explained in terms of capture of photoexcited holes by excited states of the boron acceptors in these p-type materials. The response time of the insulating diamonds was determined by using a semiconducting and insulating diamond in tandem, with the former illuminated by by 1.06 μm light and the latter by 0.35 μm light. In each case photoconductivity is induced via impurity to band transitions. The response time of the insulating diamonds is ≤500 psec. Because of this fast time response, as well as high dielectric strength and thermal conductivity, insulating diamond shows promise as a fast high voltage switch with voltage hold-off capability of (~10 kV.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H M. van Driel, R F Code, D. J Moss, P K. Bharadwaj, "Picosecond Photoconductive Switching In Semiconducting And Insulating Natural Diamond", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966080; https://doi.org/10.1117/12.966080





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