28 November 1983 Pulse Modulation Of Double Heterostructure Diode Lasers By Picosecond Optoelectronic Switches
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Abstract
Picosecond optoelectronic switches have been applied for high speed pulse modulation of double heterostructure (DHS) GaAs/(GaAl)As diode lasers. The picosecond switches made of crystalline GaAs doped with chronium (GaAs:Cr) are activated by the pulse train of a synchronously mode-locked dye laser. The generated electrical pulses with a typical duration of 60 ps are superimposed to a variable dc bias for direct modulation of different gain and index guided GaAs/(GaAl)As DHS laser diodes. The shortest pulses obtained from the diode laser are of 55 ps width. The emission spectra of the unbiased index guided as well as gain guided lasers are always multimode at this fast modulation and the spectral width of the individual laser modes is in the order of 10 GHz. Single mode operation can be obtained with index guided lasers if the short electrical pulses are superimposed to a dc current well above threshold, however, temporal broadening due to diffusion damping occurs under these operation conditions.
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Ernst O. Gobel, Ernst O. Gobel, Jurgen Kuhl, Jurgen Kuhl, Gustav Veith, Gustav Veith, } "Pulse Modulation Of Double Heterostructure Diode Lasers By Picosecond Optoelectronic Switches", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966077; https://doi.org/10.1117/12.966077
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