28 November 1983 Semiconductor Lasers Optically Pumped By Injection Lasers
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Abstract
Ultrashort cavity semiconductor lasers have been pumped at room temperature by AℓGaAs injection lasers. Peak powers of up to 10 mW were obtained in InP in the form of single longitudinal mode subnanosecond pulses. Conversion efficiency from the injection laser pump power to lasing power was up to 8 percent in InP. Tuning over 150 A° was seen.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Duguay, M. A. Duguay, T. C. Damen, T. C. Damen, } "Semiconductor Lasers Optically Pumped By Injection Lasers", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966073; https://doi.org/10.1117/12.966073
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