28 November 1983 Ultrahigh Speed Photodetectors
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Abstract
Ultrahigh speed photodiodes with -3dB frequency roll-off in excess of 100 GHz or equivalently in the time domain an impulse response with a full width half maximum (FWHM) of 5.4 psec have been developed and characterzed. These 100 GHz photodiodes have a planar configuration fabricated on n on n+ GaAs expitaxial layers on semi-insulating GaAs substrates which together with proton bombardment, have kept parasitic capacitances to ≤15 femto farads. The planar structure photodiode also lends itself easily to monolighic integration with a MESFET. The device operates at a reverse bias of -4 volts.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Y. Wang, S. Y. Wang, D. M. Bloom, D. M. Bloom, D. M. Collins, D. M. Collins, } "Ultrahigh Speed Photodetectors", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966093; https://doi.org/10.1117/12.966093
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