28 November 1983 Ultrahigh Speed Photodetectors
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Abstract
Ultrahigh speed photodiodes with -3dB frequency roll-off in excess of 100 GHz or equivalently in the time domain an impulse response with a full width half maximum (FWHM) of 5.4 psec have been developed and characterzed. These 100 GHz photodiodes have a planar configuration fabricated on n on n+ GaAs expitaxial layers on semi-insulating GaAs substrates which together with proton bombardment, have kept parasitic capacitances to ≤15 femto farads. The planar structure photodiode also lends itself easily to monolighic integration with a MESFET. The device operates at a reverse bias of -4 volts.
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S. Y. Wang, S. Y. Wang, D. M. Bloom, D. M. Bloom, D. M. Collins, D. M. Collins, } "Ultrahigh Speed Photodetectors", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); doi: 10.1117/12.966093; https://doi.org/10.1117/12.966093
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