9 December 1983 Extrinsic Silicon Focal Plane Arrays
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Proceedings Volume 0443, Infrared Detectors; (1983); doi: 10.1117/12.937945
Event: 27th Annual Technical Symposium, 1983, San Diego, United States
Abstract
This paper will survey and review the evolution and state-of-the-art of extrinsic silicon IR focal plane array technology. Extrinsic silicon photodetectors are capable of optimum infrared detection ranging from below 2 to well above 20 micrometers. Arrays of silicon detectors have been used in focal planes for both ground- and space-based operational systems such as the highly successful Infrared Arrowing Satellite (IRAS). The special properties of these detectors when they are used in conjunction with state-of-the-art charge-coupled device (CCD) multiplexing devices will have a significant impact on all future focal plane developments. The status and futured development potential of these infrared charge-coupled devices (IRCCD's) will be discussed in this paper. The concepts for and progress made toward realizing two-dimensional mosaic focal planes integrating silicon CCD multiplexers and extrinsic silicon detector array will be reviewed. Finally, the potential and applications of silicon focal planes will be assessed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. H. Pommerrenig, "Extrinsic Silicon Focal Plane Arrays", Proc. SPIE 0443, Infrared Detectors, (9 December 1983); doi: 10.1117/12.937945; https://doi.org/10.1117/12.937945
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KEYWORDS
Silicon

Multiplexers

Charge-coupled devices

Infrared imaging

Sensors

Infrared radiation

Lead

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