HnCdTe Charge Transfer Device Focal Planes

C. Grady Roberts

doi:10.1117/12.937944

9 December 1983 HnCdTe Charge Transfer Device Focal Planes

C. Grady Roberts

Proceedings Volume 0443, Infrared Detectors; (1983) https://doi.org/10.1117/12.937944
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Metal-Insulator-Semiconductor (MIS) detectors fabricated in HgCdTe offer significant advantages for focal plane applications. These detectors perform noise free signal intearation directly in the HoCdTe, can be formed in either n- or p-type material, do not require formation of a metallurgical junction, and are easy to interface to low power signal processing integrated circuits in silicon. Furthermore, this device technology readily facilitates the formation of charge transfer devices which perform some signal processing in the HaCdTe prior to transfer of the signal to the silicon processor.

Citation Download Citation

C. Grady Roberts "HnCdTe Charge Transfer Device Focal Planes", Proc. SPIE 0443, Infrared Detectors, (9 December 1983); https://doi.org/10.1117/12.937944

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