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9 December 1983 "Schottky-Barrier Infrared Charge-Coupled Device Focal Plane Arrays"
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Recent development of high-performance Pd2Si and PtSi Schottky-barrier IR-CCD image sensors make these monolithic focal plane arrays attractive for many SWIR and thermal imaging applications. PtSi Schottky-barrier detectors operated at 80K have quantum efficiency of several percent in the 3 to 5 μm spectral range and cut-off wavelength of about 6.0 μm. Pd2Si Schottky-barrier detectors operated between 120 and 140K have cut-off wavelength of 3.6 μm and quantum efficiency in the range of 1.0 to 8.0% in the SWIR band. High-quality thermal imaging was achieved with a 64x128-element PtSi Schottky-barrier IR-CCD imager in a TV compatible IR camera operated with 60 frames per second. This paper reviews the Schottky-barrier IR-CCD technology developed at RCA. A model for photoyield of Schottky-barrier detectors (SBDs) is reviewed and compared with experimen-tal data. The architecture and design trade-offs of the SBD IR-CCD imagers are discussed. Also included is a discussion of the quantum efficiency requirements for staring thermal imagers and the performance achievable with the Schottky-barrier IR-CCD arrays.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Walter F. Kosonocky and Hammam Elabd ""Schottky-Barrier Infrared Charge-Coupled Device Focal Plane Arrays"", Proc. SPIE 0443, Infrared Detectors, (9 December 1983);


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