Soft X-Ray Photoemission Techniques For Characterizing Metal-Semiconductor Interfaces

L J Brillson

doi:10.1117/12.939185

27 March 1984 Soft X-Ray Photoemission Techniques For Characterizing Metal-Semiconductor Interfaces

L J Brillson

Proceedings Volume 0447, Science with Soft X-Rays; (1984) https://doi.org/10.1117/12.939185
Event: 1983 Brookhaven Conference: Science with Soft X-Rays, 1983, Upton, United States

Abstract

The wide energy range and tunability of synchrotron radiation provide soft x-ray photoemission spectroscopy (SXPS) with several effective methods for characterizing metal-semiconductor interfaces on an atomic scale. These SXPS techniques reveal that metal-semiconductor interfaces are in general not abrupt and that the detailed atomic structure is a controlling factor in determining interface electronic structure.

Citation Download Citation

L J Brillson "Soft X-Ray Photoemission Techniques For Characterizing Metal-Semiconductor Interfaces", Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); https://doi.org/10.1117/12.939185

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