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27 March 1984 Soft X-Ray Photoemission Techniques For Characterizing Metal-Semiconductor Interfaces
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Proceedings Volume 0447, Science with Soft X-Rays; (1984) https://doi.org/10.1117/12.939185
Event: 1983 Brookhaven Conference: Science with Soft X-Rays, 1983, Upton, United States
Abstract
The wide energy range and tunability of synchrotron radiation provide soft x-ray photoemission spectroscopy (SXPS) with several effective methods for characterizing metal-semiconductor interfaces on an atomic scale. These SXPS techniques reveal that metal-semiconductor interfaces are in general not abrupt and that the detailed atomic structure is a controlling factor in determining interface electronic structure.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L J Brillson "Soft X-Ray Photoemission Techniques For Characterizing Metal-Semiconductor Interfaces", Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); https://doi.org/10.1117/12.939185
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