27 March 1984 The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission
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Proceedings Volume 0447, Science with Soft X-Rays; (1984) https://doi.org/10.1117/12.939180
Event: 1983 Brookhaven Conference: Science with Soft X-Rays, 1983, Upton, United States
Abstract
Angle resolved photoemission spectra have been measured for the polar (III) and (100) surfaces of GaAs. Strong differences exist in both cases between Ga-rich and As-rich surfaces in the energy region near the valence band maximum. Comparison of the spectra for the As-rich GaAs(111) (2x2) surface with a calculation of the location expected for bulk-derived features shows that the bulk bands appear to be folded back into the (2x2) surface Brillouin zone. No such effect is seen for the GaAs(100) c(4x4) surface.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R D Bringans, R D Bringans, R Z Bachrach, R Z Bachrach, } "The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission", Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); doi: 10.1117/12.939180; https://doi.org/10.1117/12.939180
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