19 March 1984 Electron Beam Pattern Writer For X-Ray Masks
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This paper discusses the capabilities of a vector scan electron-beam system as an X-ray mask writer for pattern geometries at and below one-half micron. The noise level in the deflection system has been reduced to an RMS value of 150 A over a 0.5 mm deflection field, thus making our exposure system usable in the one-quarter micron regime. Pattern geometries below 2000 A have been fabricated on a thin membrane. Drift compensation techniques, implemented in software, have reduced placement errors over the entire mask to less than 700 A. Accomplishments in the areas of noise reduction, bandwidth error compensation, system resolution, and improvements in pattern placement accuracy are discussed.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R Viswanathan, R Viswanathan, A D. Wilson, A D. Wilson, J Lafuente, J Lafuente, H Voelker, H Voelker, A Kern, A Kern, "Electron Beam Pattern Writer For X-Ray Masks", Proc. SPIE 0448, X-Ray Lithography and Applications of Soft X-Rays to Technology, (19 March 1984); doi: 10.1117/12.939216; https://doi.org/10.1117/12.939216


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