19 March 1984 Possibility Of Enlarging X-Ray Exposure Area With X-Ray Mirror Or By Electron Beam Vertical Motion
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Abstract
High collimation of synchrotron radiation perpendicular to the orbital plane of the 'electrons in a storage ring results in only a small exposed stripe on the wafer. Typically, the height ranges between 0.5 and 1 cm. Two methods of enlarging the exposure field, dealt with in this paper, are the application of plane scanning X-ray mirrors and the stimulation of electron beam oscillations in the ring. Due to the considerable decrease in reflectivity with decreasing wavelength and increasing mirror angle, the usable reflection angles are limited to the grazing-incidence region below 2° in the case of X-ray lithography. The pure Si02-mirror (Zerodur) used in the experiments has reflectivities above 80 % at up to 1.5°. For the wavelengths in question (--1 nm). The theoretical values of the absorbed energy in the resist, depending on the glacing angle, have been compared with experimental results. From this dependence, the velocity profile of the mirror movement for attaining a homogeneous exposure can be derived. The preliminary experiments concerning surface degradation due to cracked hydrocarbons indicate that this factor is not as severe as previously expected in the case of the soft X-rays used in lithography. The alternative method of enlarging the exposed area, by stimulating electron oscillations in the storage ring, has also been investigated. The initial results show a practically-homogeneous exposure area 3 cm in height. A simple improvement in the control electronics for the additional steering magnets, which is being made at the moment, will at least double this area. Then, the exposable step-and-repeat field will amount to 6 x 6 cm2 with this specific method, which does not require any special arrangements in the beam line.
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H Betz, H Betz, G Mulhaupt, G Mulhaupt, } "Possibility Of Enlarging X-Ray Exposure Area With X-Ray Mirror Or By Electron Beam Vertical Motion", Proc. SPIE 0448, X-Ray Lithography and Applications of Soft X-Rays to Technology, (19 March 1984); doi: 10.1117/12.939210; https://doi.org/10.1117/12.939210
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