10 May 1984 Ellipsometric-Electrolyte Electroreflectance Study Of The Si/SiO2 Interface
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Abstract
Ellipsometry and electrolyte-electroreflectance have been combined as a destructive probe of the Si/Si02/KOH system. Optical measurements were made in the 3-4 eV photon energy range. The optical and electrical properties of the substrate/oxide interface of anodic and thermal oxides have been studied during the oxide etching. Changes in the ellipsometric parameters and the electroreflectance response of the substrate have been interpreted in terms of stoichiometric changes and the presence of surface states in the connective region between the Si semiconductor and its oxide.
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Orest J. Glembocki, "Ellipsometric-Electrolyte Electroreflectance Study Of The Si/SiO2 Interface", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939297; https://doi.org/10.1117/12.939297
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