Picosecond And Femtosecond Diagnostics Of Semiconductors

E. Wintner; J. G. Fujimoto; E. P. Ippen

doi:10.1117/12.939298

10 May 1984 Picosecond And Femtosecond Diagnostics Of Semiconductors

E. Wintner, J. G. Fujimoto, E. P. Ippen

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939298
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

Ultrashort light pulses are used to study carrier dynamics in highly excited semiconductor materials. Picosecond pulses from a cw modelocked Nd:YAG laser create carriers and probe nonlinear (Auger) recombination in InGaAs and InGaAsP epilayers. Femtosecond continuum pulses from a dye oscillator/amplifier system monitor the spectral dynamics of free excitons in CdSe following optical excitation.

Citation Download Citation

E. Wintner, J. G. Fujimoto, and E. P. Ippen "Picosecond And Femtosecond Diagnostics Of Semiconductors", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939298

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