Raman Characterization Of Semiconductors Revisited

Fred H. Pollak; Raphael Tsu

doi:10.1117/12.939287

10 May 1984 Raman Characterization Of Semiconductors Revisited

Fred H. Pollak, Raphael Tsu

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939287
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

We review a number of recent significant developments in the use of Raman scattering (first-order as well as second-order) to characterize semiconductors in bulk, thin film or device form. Areas to be discussed include microcrystalline and amorphous tetrahedrally bonded solids (particularly Si), ion-damage and laser-annealing effects, microscopic nature of potential fluctuations in alloy semiconductors (including single crystal metastable materials), determination of the composition dependence of conduction band effective mass and scattering times, HgCdTe and CdTe, zone-folding in superlattices, correlation of light scattering and transport properties in quantum well structures, interfaces (including semiconductor/vacuum, Schottky barriers, MOS, heterojunctions) and determination of strains (including temperature dependence) at the interface of Si on various substrates.

Citation Download Citation

Fred H. Pollak and Raphael Tsu "Raman Characterization Of Semiconductors Revisited", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939287

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