10 May 1984 Raman Characterization Of Semiconductors Revisited
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Abstract
We review a number of recent significant developments in the use of Raman scattering (first-order as well as second-order) to characterize semiconductors in bulk, thin film or device form. Areas to be discussed include microcrystalline and amorphous tetrahedrally bonded solids (particularly Si), ion-damage and laser-annealing effects, microscopic nature of potential fluctuations in alloy semiconductors (including single crystal metastable materials), determination of the composition dependence of conduction band effective mass and scattering times, HgCdTe and CdTe, zone-folding in superlattices, correlation of light scattering and transport properties in quantum well structures, interfaces (including semiconductor/vacuum, Schottky barriers, MOS, heterojunctions) and determination of strains (including temperature dependence) at the interface of Si on various substrates.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred H. Pollak, Raphael Tsu, "Raman Characterization Of Semiconductors Revisited", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939287; https://doi.org/10.1117/12.939287
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