10 May 1984 Raman Study Of Strain And Microadhesion In Silicon
Author Affiliations +
By measuring the Raman frequency shift due to a two-dimensional stress induced in silicon thin films in various substrates having thermal expansion coefficients above and below that of silicon, we have characterize the strength of bond between the silicon film and the substrate. Therefore our approach offers a quantitative measure of microadhesion.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Gonzalez-Hernandez, J. Gonzalez-Hernandez, Denis Martin, Denis Martin, Raphael Tsu, Raphael Tsu, "Raman Study Of Strain And Microadhesion In Silicon", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939288; https://doi.org/10.1117/12.939288

Back to Top