10 May 1984 Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes
Author Affiliations +
Abstract
This paper presents a review of techniques for spectroscopic characterization of mile gas pnase species involved in vapor depositon and plasma etching, two processes of great importance in the semiconductor industry. Descriptions of the apparatus requirements and capabilities of diode laser absorption and dye laser resonance fluorescence detection techniques are given. In addition, band strength and other spectroscopic data for selected molecules are used to give estimates of the detection sensitivity for various species.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joda Wormhoudt, Joda Wormhoudt, Alan C. Stanton, Alan C. Stanton, Joel A. Silver, Joel A. Silver, } "Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939293; https://doi.org/10.1117/12.939293
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Fluorescent diagnostics of cyanobacteria
Proceedings of SPIE (May 18 2010)
Semiconductor lasers in analytical chemistry
Proceedings of SPIE (June 30 1991)
Proton-transfer laser
Proceedings of SPIE (April 30 1992)
Near-infrared laser diodes in monitoring applications
Proceedings of SPIE (April 30 1992)

Back to Top