10 May 1984 Synchrotron Radiation Spectroscopes For Semiconductor Interface Characterization: Si(111)/SiO2
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The unique tunability and x-ray energies of synchrotron radiation can be exploited to determine new properties of semiconductor interfaces that are central to current electronics technologies. As device dimensions shrink, a microscopic understanding of the growth, extent and composition of semiconductor interfaces becomes key in advancing the state-of-the-art. In this paper, we illustrate the dramatic advances in the scientific exploration of interface properties by an example from the Si-Si02 system which utilizes the photon energy tunability of synchrotron radiation combined with the core electron energy tunability of Soft X-ray Photoelectron Spectroscopy (SXPS). While the Si-Si02 interface is one of the most technologically important and well-controlled electronic materials systems today, we show that a detailed description of the interface regions still eludes direct correlation with measured trapping levels in MOS devices. By "fingerprinting" the oxidation states of Si on an atomic scale, we explore the evolution of the interface, determine species which serve as connective regions between the structurally incompatible materials, and deduce possible interface defects which might accompany incomplete oxidation. Synchrotron radiation studies of such process-related aspects of semiconductor interfaces are central to the understanding and control of device characteristics.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert S. Bauer, Robert S. Bauer, "Synchrotron Radiation Spectroscopes For Semiconductor Interface Characterization: Si(111)/SiO2", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939301; https://doi.org/10.1117/12.939301

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