10 May 1984 The Characterization Of Materials By Spectroscopic Ellipsometry
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Abstract
In this paper, I review the use of spectroscopic ellipsometry (SE) to determine properties of bulk materials, thin films, and interfaces. The relationship of SE to other characterization techniques and the role of optical modeling in representing average or effective properties of microstructurally complicated structures is discussed. The present state of instrumentation is described and prospects for future developments are indicated. Recent progress in data reduction and analysis includes the development of Fourier methods to minimize noise and baseline effects and to improve accuracy in data manipulation and the determination of critical point parameters, and of systematic methods to determine thicknesses of films for which the dielectric properties are unknown. Examples included illustrate the determination of bulk density and alloy composition, microscopic roughness, constituent fractions of heterogeneous materials, dielectric properties of overlayers, and the properties of buried interfaces. A list of references to other work and to more detailed treatments of the topics discussed here is given at the end.
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D. E. Aspnes, D. E. Aspnes, } "The Characterization Of Materials By Spectroscopic Ellipsometry", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); doi: 10.1117/12.939290; https://doi.org/10.1117/12.939290
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