14 June 1984 A-S:H Films Produced From Laser Heated Gases: Process Characteristics And Film Properties
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Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939437
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
A process for depositing a-Si:H films from CO2 laser-heated gases has been demonstrated and modelled, the properties of resulting films have been investigated extensively. Film growth rate is determined by the peak gas temperature, defined by an energy balance between the absorption of the laser beam and thermal conduction to the substrate and the cell walls. The hydrogen content and neutral spin density follow an equilibrium function of the substrate temperature. The optical and electronic properties also depend on the substrate temperature.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J H. Flint, J H. Flint, M. Meunier, M. Meunier, D Adler, D Adler, J S Haggerty, J S Haggerty, "A-S:H Films Produced From Laser Heated Gases: Process Characteristics And Film Properties", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939437; https://doi.org/10.1117/12.939437
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