14 June 1984 Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films
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Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939440
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
A glow discharge electron beam has been used to deposit silicon dioxide (Si02) and silicon nitride (Si3N4) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The Si02 films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si3N4 films were deposited in silane-ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate temperatures from 50-400°C. The index of refraction, sthoichiometry, pinhole density, etch rate, conformal step coverage, and hydrogen bonding were measured.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K Emery, L. R. Thompson, J J. Rocca, G. J. Collins, "Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939440; https://doi.org/10.1117/12.939440

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