14 June 1984 Laser-Assisted Evaporations Of Dielectric And Semiconductor Materials
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Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984); doi: 10.1117/12.939439
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
Evaporation of materials by means of lasers is a technique that has reached maturity as an optical coating and semiconductor epitaxial layer growth technology and as such has been applied to a large class of materials. Using cw and pulsed CO2 lasers, several oxides, fluorides and semiconductors were deposited with good optical properties. Mixtures of the above were obtained by using multiple laser evaporation targets. The dielectric films were characterized for their optical properties and semiconductor films for their structural and electrical properties. Laser evaporation conditions and characterization results of the films will be explained.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Sankur, "Laser-Assisted Evaporations Of Dielectric And Semiconductor Materials", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939439; https://doi.org/10.1117/12.939439
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KEYWORDS
Pulsed laser operation

Thin films

Oxides

Semiconductor lasers

Thin film deposition

Continuous wave operation

Optical properties

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