Photochemical CVD For VLSI Fabrication

R C Rossi; K K Schuegraf

doi:10.1117/12.939441

14 June 1984 Photochemical CVD For VLSI Fabrication

R C Rossi, K K Schuegraf

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939441
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

A photochemical process is described that has potential for the manufacture of very large scale integrated circuits. A prototype reactor is described and the results of experimentation are presented and discussed. The deposition of a Si0₂ thin film by the photochemical reaction of silane and nitrous oxide was found to be a surface reaction but the data has not differentiated between a desorption or adsorption process. The reaction is photosensitized with mercury and it is shown that at high mercury concentrations, a mercurous oxide forms. Modifications to the prototype reactor are presented showing the excellent thickness uniformity possible. Criteria for VLSI manufacture by photochemistry is also presented.

Citation Download Citation

R C Rossi and K K Schuegraf "Photochemical CVD For VLSI Fabrication", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939441

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