14 June 1984 Thin Film Deposition By UV Laser Photolysis
Author Affiliations +
Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939428
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
An ArF excimer laser was used to photochemically deposit thin films of silicon dioxide, silicon nitride, aluminum oxide and zinc oxide at low temperatures (100-500°C) for microelectronic applications. High depo-sition (>1000 A/Min) rates and conformal step coverage were obtained. The hydrogen bonding, pinhole density, index of refraction, etch rate, and breakdown voltage have been measured for the Si02 and silicon nitride films. The effect of substrate temperature and ArF (193 nm) surface photons on the physical, chemical and electrical properties of Si02 films have been investigated.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Emery, K. Emery, P K Boyer, P K Boyer, L R. Thompson, L R. Thompson, R. Solanki, R. Solanki, H Zarnani, H Zarnani, G. J Collins, G. J Collins, } "Thin Film Deposition By UV Laser Photolysis", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939428; https://doi.org/10.1117/12.939428


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