26 September 1984 A Comparison Of LiNbo3 And III-V Semiconductor Technologies For Integrated Optics
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Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939450
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The relative merits of LiNb03 and III-V semiconductors are compared for use in integrated optics. It is shown that their different material properties and fabrication characteristics affect their device performance. Device design must be optimized for the particular material used.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E Garmire, E Garmire, } "A Comparison Of LiNbo3 And III-V Semiconductor Technologies For Integrated Optics", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939450; https://doi.org/10.1117/12.939450
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