26 September 1984 Configurations For High Speed GaAs CCD Imagers
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Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939460
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
A process has been investigated for the fabrication of overlapping charge transfer electrode structures in charge-coupled devices on gallium arsenide with ion implanted active channels. The electrode metal was aluminum and the interelectrode isolation medium was anodically formed aluminum oxide. A CCD with ion implanted active channel is desirable since this form is most compatible with standard GaAs integrated circuit fabrication and the latter usually forms an important component of a monolithic CCD imager. For good dynamic range the channel noise must be kept to a minimum. Hence, for this purpose a computer model has been developed for simulating charge transfer through an implanted channel to aid in the design of the transfer electrode structure and the channel profile.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P B Kosel, P B Kosel, M R Wilson, M R Wilson, J. T Boyd, J. T Boyd, L A King, L A King, } "Configurations For High Speed GaAs CCD Imagers", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939460; https://doi.org/10.1117/12.939460


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