26 September 1984 Guided Wave Device Design And Fabrication For Monolithic Integration In GaAs
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Proceedings Volume 0460, Processing of Guided Wave Optoelectronic Materials I; (1984) https://doi.org/10.1117/12.939459
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
Integrated optical circuits operating at wavelengths from 1 to 12 microns and fabricated monolithically on a GaAs substrate would have a tremendous impact on signal processing systems. These circuits would afford the ultimate merger of the VLSI electronics and integrated GaAs optoelectronics, as well as the monolithic integration of microwave electronic devices such as Gunn diodes and Schottky gate FET's with GaAs optical components.1 Such GaAs components include planar and channel waveguides, parallel channel directional couplers, electro-optic (EO) modulators and switches, laser diodes, acousto-optic modulators, and detectors.2 This paper focuses upon the design and fabrication by proton implantation of the necessary fundamental guided wave components in GaAs for operation at λo = 1.3, 3.4, and 10.6 μm wavelengths. The objective is to produce waveguide designs with less than 3 dB/cm optical propagation loss at each wavelength of interest. Specific range-energy curves for proton implantation in GaAs to produce the desired waveguide characteristics have also been developed.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M A Mentzer, R G. Hunsperger, S. Sriram, J Bartko, J M Zavada, H. A Jenkinson, "Guided Wave Device Design And Fabrication For Monolithic Integration In GaAs", Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939459; https://doi.org/10.1117/12.939459
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